Microwave Amplifier Designed for maximum reliability and configured for the greatest convenience in interfacing microwave sources such as sweepers and signal generators Providing 100 mW (+20 dBm) of unleveled power output from 2 to 18.6 GHz, 50 mW (+17 dBm) from 18.6 to 20.0 GHz Offers one of the broadest operating bandwidths available from a solid-state power amplifier Performance is achieved by using a GaAs FET design of multiple stages Stages provide 15 dB of gain up to 18.6 GHz while maintaining a very low noise figure of 13 dB Power flatness is ± 1.25 dB Harmonics at +20 dBm output is -30 dBm from 11 to 20 GHz typical 1 dB compression point is +21 dB and maximum input is +27 dBm Input and output impedance's are 50-ohms with an input SWR of less than 2.8